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HBTs with a planar-type extended base as a hydrogen-sensitive sensor
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  • Chia-Hua Huang,
  • Shih-Wei Tan,
  • Hao Lo,
  • Chieh Lo,
  • Wen-Shiung Lour
Chia-Hua Huang
National Dong Hwa University

Corresponding Author:[email protected]

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Shih-Wei Tan
National Taiwan Ocean University College of Electrical Engineering and Computer Science
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Hao Lo
National Taiwan University
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Chieh Lo
National Taiwan University
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Wen-Shiung Lour
National Taiwan Ocean University
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A hydrogen sensing transistor fabricated by a heterojunction bipolar transistor (HBT) with an extended base (EB) formed by a metal-semiconductor-metal (MSM) hydrogen sensor is reported. The power consumption in stand-by mode is smaller than 2 μW. Common-emitter characteristics show that the sensing base (collector) current gains at 25℃ in 0.01%, 0.1%, and 1% H2/N2 are as high as 75 (512), 134, (977), and 233 (2.89  104), respectively. Low-power consumption and high-sensitive gains are indicative that our HBT together with planar-type MSM sensor is very promising for applications to hydrogen sensing transistors using one voltage source.
03 Jul 2022Submitted to Electronics Letters
04 Jul 2022Submission Checks Completed
04 Jul 2022Assigned to Editor
19 Jul 2022Reviewer(s) Assigned
19 Aug 2022Review(s) Completed, Editorial Evaluation Pending
22 Aug 2022Editorial Decision: Revise Minor
24 Aug 20221st Revision Received
24 Aug 2022Submission Checks Completed
24 Aug 2022Assigned to Editor
24 Aug 2022Review(s) Completed, Editorial Evaluation Pending
28 Aug 2022Editorial Decision: Accept