Crosstalk Reduction between Microstrip Lines using TL-Shaped Defected
A method to reduce crosstalk using TL-shaped defect microstrip structure
(DMS) is proposed to solve the far-end crosstalk between microstrip
lines. This method optimizes the ratio of the capacitive coupling and
the inductive coupling between the coupled microstrip lines by etching
the TL-shaped DMS on the microstrip line and reduces the strength of the
electromagnetic (EM) coupling, which can achieve crosstalk suppression.
The equivalent circuit model, S-parameters and full-wave EM simulations
are used to analyze the crosstalk between the microstrip lines etched
with and without the TL-shaped DMS. High Frequency Structure Simulator
(HFSS) software simulation and samples test results show that the
TL-shaped DMS can effectively reduce the far-end crosstalk while
guaranteeing the transmission ability of microstrip line to the signal.
The maximum far-end crosstalk can be reduced by 42dB in the frequency
range of 0–8 GHz and the test results of the samples are in good
agreement with the simulation results.