Conductance peaks and gaps in single-electron device with the presence
of electron-electron interaction - “Nonequilibrium green function
approach”
Abstract
Consider a single-electron transistor (SET) with a small size quantum
dot (QD), where confined energy and the Coulomb interaction control the
charges adding to QD. In this paper, a theoretical analysis of the
relation between source-drain voltage and gate voltage has been done to
define quantum-Coulomb blocked (and unblocked) diamonds for QD that has
N electrons. An analytical equation for the conductance has been derived
using the non-equilibrium Green function technique (NEGFT). Further, the
effect of QD size and the tunnelling rate on conductance peaks and gaps
have been investigated. Finally, the effect of gate voltage on
conductance peaks and gaps with respect the quantum-Coulomb blocked
regions has been analysed.